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| 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features * Low on-resistance R DS(on) = 4.5 m typ. * Low drive current * 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 40 20 75 300 75 50 333 100 150 -55 to +150 Unit V V A A A A mJ W C C 1. PW 10 s, duty cycle 1% 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 Datasheet Title Electrical Characteristics (Ta = 25C) Item Symbol Min 40 -- -- 1.0 -- -- |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max -- 0.1 10 2.5 5.8 10 -- -- -- -- -- -- -- -- -- -- -- -- -- Unit V A A V m m S pF pF pF nc nc nc ns ns ns ns V ns I F = 75 A, VGS = 0 I F = 75 A, VGS = 0 diF/ dt = 50 A/ s Test Conditions I D = 10 mA, VGS = 0 VGS = 20 V, VDS = 0 VDS = 40 V, VGS = 0 I D = 1 mA, VDS = 10 V Note1 I D = 40 A, VGS = 10 V Note1 I D = 40 A, VGS = 4 V Note1 I D = 40 A, VDS = 10 V Note1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V I D = 75 A VGS = 10 V, ID = 40 A RL = 0.75 Drain to source breakdown voltage V(BR)DSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 1. Pulse test I GSS I DSS VGS(off) RDS(on) 3 Datasheet Title Main Characteristics Power vs. Temperature Derating 200 Pch (W) 1000 I D (A) 300 100 30 10 3 1 0.3 0 50 100 Case Temperature 150 200 Tc (C) 0.1 Ta = 25C 3 30 0.1 0.3 1 10 100 Drain to Source Voltage V DS (V) PW Maximum Safe Operation Area 150 Channel Dissipation 100 50 Drain Current = 10 DC ms Op (1 s e (T rati hot) c = on 25 Operation in C ) this area is limited by R DS(on) 0 s s 1 m s 10 10 Typical Output Characteristics 100 4V 3.5 V I D (A) 5V 60 Drain Current VGS = 10 V Pulse Test (A) 80 80 100 Typical Transfer Characteristics V DS = 10 V Pulse Test ID 3V Drain Current 60 40 40 75C 25C Tc = -25C 20 2.5 V 0 2 4 6 Drain to Source Voltage 8 10 V DS (V) 20 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 Datasheet Title Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.5 Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) (m ) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 0.4 20 10 5 0.3 I D = 50 A 0.2 20 A 10 A 0 12 4 8 Gate to Source Voltage 16 20 V GS (V) VGS = 4 V 10 V 0.1 2 1 1 3 10 30 100 300 1000 Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) (m ) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 Forward Transfer Admittance vs. Drain Current 500 200 100 50 20 10 5 2 1 0.5 0.1 0.3 1 3 10 30 100 25 C 75 C Tc = -25 C V DS = 10 V Pulse Test 12 VGS = 10 V I D = 50 A 10, 20 A 10, 20, 50 A 8 4 0 -50 4V 0 50 100 Tc 150 (C) 200 Case Temperature Drain Current I D (A) 5 Datasheet Title Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 1000 Reverse Recovery Time trr (ns) 30000 10000 500 200 100 50 20 10 0.1 Ciss 3000 1000 Coss Crss di / dt = 50 A / s V GS = 0, Ta = 25C 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 300 100 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 100 V DS (V) V GS (V) I D = 75 A V GS V DD = 40 V 25 V 10 V V DS 20 1000 500 Switching Time t (ns) Switching Characteristics t d(off) tf tr t d(on) 80 16 Drain to Source Voltage 60 12 Gate to Source Voltage 200 100 50 20 40 8 20 V DD = 40 V 25 V 10 V 80 160 240 320 Gate Charge Qg (nc) 4 0 400 V GS = 10 V, V DD = 30 V PW = 5 s, duty < 1% 2 5 10 20 I D (A) 50 100 0 10 0.1 0.2 0.5 1 Drain Current 6 Datasheet Title Reverse Drain Current vs. Source to Drain Voltage 100 Reverse Drain Current I DR (A) 10 V 80 5V 60 V GS = 0, -5 V 40 Repetitive Avalanche Energy E AR (mJ) 500 I AP = 50 A V DD = 25 V duty < 0.1 % Rg > 50 Maximun Avalanche Energy vs. Channel Temperature Derating 400 300 200 20 Pulse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage 100 0 25 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50 0 VDD 7 Datasheet Title Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 1.25 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu ho 1s D= PW T 0.01 10 100 1m 10 m Pulse Width 100 m PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 Datasheet Title Package Dimensions Unit: mm (1.4) 10.2 0.3 4.44 0.2 1.3 0.2 11.3 0.5 8.6 0.3 10.0 +0.3 -0.5 (1.4) 10.2 0.3 4.44 0.2 1.3 0.2 (1.5) 11.0 0.5 (1.5) 0.76 0.1 (1.5) 8.6 0.3 10.0 +0.3 -0.5 1.2 0.2 0.86 +0.2 -0.1 1.27 0.2 2.59 0.2 1.27 0.2 0.4 0.1 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 3.0 +0.3 -0.5 0.1 +0.2 -0.1 2.59 0.2 0.4 0.1 2.54 0.5 2.54 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK -- -- 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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